PART |
Description |
Maker |
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
MB8116160A-70 |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16 位快速页面存取模式动态RAM) CMOS 1 M ?16 BIT Fast Page Mode DRAM(CMOS 1 M ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
MB8502E064AB-70 MB8502E064AB-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM) CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HY514400 HY514400J |
1M x 4-bit CMOS DRAM
|
List of Unclassifed Manufacturers
|
HY514400 |
1M x 4-Bit CMOS DRAM
|
Hyundai
|
UPD424260G5-70-7JF |
CMOS 4M Bit DRAM
|
NEC
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
|
HYM536220A |
2M x 36-Bit CMOS DRAM Module
|
Hyundai
|